NTZS3151PT1H
MOSFET P-CH 20V 860MA SOT563-6Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTZS3151PT1H is a P-Channel, 20V MOSFET designed for surface mount applications. This component features a maximum continuous drain current of 860mA (Ta) and a low on-resistance of 150mOhm at 950mA drain current and 4.5V gate-source voltage. The device operates within a temperature range of -55°C to 150°C. Its SOT-563 package, supplied on tape and reel, is suitable for compact designs. Key electrical parameters include a gate charge of 5.6 nC (Max) at 4.5V and an input capacitance of 458 pF (Max) at 16V. This MOSFET is utilized in various industries including consumer electronics and automotive applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 860mA (Ta) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 950mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 170mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-563 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 458 pF @ 16 V |
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