NTY100N10G
MOSFET N-CH 100V 123A TO264Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi NTY100N10G is an N-Channel Power MOSFET engineered for robust performance in demanding applications. This device offers a 100 V drain-source breakdown voltage (Vds) and a continuous drain current (Id) capability of 123 A at 25°C (Tc). With a low on-resistance (Rds On) of 10 mOhm at 50 A and 10 V (Vgs), it minimizes conduction losses. The device features a high power dissipation of 313 W (Tc) and a maximum junction temperature of 150°C, making it suitable for power conversion, motor control, and industrial power supply applications. Key parameters include a gate charge (Qg) of 350 nC at 10 V and input capacitance (Ciss) of 10110 pF at 25 V. The NTY100N10G is housed in a TO-264 package, facilitating through-hole mounting.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 123A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 313W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-264 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 350 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10110 pF @ 25 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
RFD14N05LSM
MOSFET N-CH 50V 14A TO252AA
