NTY100N10
MOSFET N-CH 100V 123A TO264Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTY100N10 is an N-Channel power MOSFET designed for high-current applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 123A at 25°C. The device exhibits a low On-Resistance (Rds On) of 10mOhm at 50A and 10V, facilitating efficient power transfer. Its maximum power dissipation is rated at 313W (Tc), and it operates within a temperature range of -55°C to 150°C (TJ). Key parameters include a Gate Charge (Qg) of 350 nC at 10V and an Input Capacitance (Ciss) of 10110 pF at 25V. The NTY100N10 is housed in a TO-264 package, suitable for through-hole mounting and commonly utilized in power supply units, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 123A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 313W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-264 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 350 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10110 pF @ 25 V |
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