NTTS2P03R2G
MOSFET P-CH 30V 2.1A MICRO8Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTTS2P03R2G is a P-Channel MOSFET designed for power management applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 2.1A (Ta) at 25°C. The Rds On is specified at a maximum of 85mOhm at 2.48A and 10V gate drive. Operating across a temperature range of -55°C to 150°C (TJ), it is housed in an 8-MSOP package suitable for surface mounting. Key electrical parameters include a gate charge (Qg) of 22 nC at 4.5V and input capacitance (Ciss) peaking at 500 pF at 24V. The maximum power dissipation (Ta) is 600mW. This device is utilized in various industrial sectors including automotive and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 2.48A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 600mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-MSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 24 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
