NTTS2P03R2
MOSFET P-CH 30V 2.1A MICRO8Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTTS2P03R2: a P-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 2.1A at 25°C (Ta). With a maximum power dissipation of 600mW (Ta), it offers efficient operation in a compact 8-MSOP package. The Rds On is specified at a maximum of 85mOhm at 2.48A and 10V gate drive. Key electrical characteristics include a gate charge (Qg) of 22nC at 4.5V and input capacitance (Ciss) of 500pF at 24V. The device supports a maximum gate-source voltage (Vgs) of ±20V and has a threshold voltage (Vgs(th)) of 3V at 250µA. Operating temperature range is -55°C to 150°C. This MOSFET is suitable for use in power management, consumer electronics, and industrial control systems. The NTTS2P03R2 is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 2.48A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 600mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-MSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 24 V |
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