NTTS2P02R2G
MOSFET P-CH 20V 2.4A MICRO8Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTTS2P02R2G is a P-Channel MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) capability of 2.4A at 25°C. With a maximum Rds(on) of 90mOhm at 2.4A and a 4.5V gate-source voltage (Vgs), it offers efficient power switching. The device is housed in an 8-MSOP package, suitable for surface mounting. Key electrical parameters include a gate charge (Qg) of 18 nC at 4.5V Vgs and an input capacitance (Ciss) of 550 pF at 16V Vds. The NTTS2P02R2G operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 780mW (Ta). This MOSFET finds application in various industries including automotive and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 780mW (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | 8-MSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 16 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
