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NTTS2P02R2

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NTTS2P02R2

MOSFET P-CH 20V 2.4A MICRO8

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTTS2P02R2 is a P-Channel Power MOSFET designed for high-density applications. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 2.4A at 25°C. The Rds(On) is specified at a maximum of 90mOhm at 2.4A and 4.5V Vgs, with drive voltages ranging from 2.5V to 4.5V. Gate charge (Qg) is 18nC at 4.5V, and input capacitance (Ciss) is a maximum of 550pF at 16V. With a maximum power dissipation of 780mW (Ta), this MOSFET is housed in an 8-MSOP package suitable for surface mounting. Its operating temperature range is from -55°C to 150°C (TJ). This device finds application in various industrial sectors including automotive and consumer electronics.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-TSSOP, 8-MSOP (0.118"", 3.00mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C2.4A (Ta)
Rds On (Max) @ Id, Vgs90mOhm @ 2.4A, 4.5V
FET Feature-
Power Dissipation (Max)780mW (Ta)
Vgs(th) (Max) @ Id1.4V @ 250µA
Supplier Device Package8-MSOP
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds550 pF @ 16 V

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