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NTTFSS1D1N02P1E

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NTTFSS1D1N02P1E

25V PT11E IN 3X3 SD PACKAGE

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NTTFSS1D1N02P1E is an N-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 25V and offers a continuous drain current (Id) of 39A at 25°C ambient, scaling to 264A at 25°C case temperature. With a low on-resistance (Rds On) of 0.85mOhm at 27A and 10V Vgs, it minimizes conduction losses. The MOSFET is constructed using advanced Metal Oxide technology and is housed in a compact 9-WDFN (3.3x3.3) package, suitable for surface mounting. Key electrical parameters include a typical gate charge (Qg) of 60 nC at 10V and input capacitance (Ciss) of 4360 pF at 13V. Power dissipation capabilities are 2W at 25°C ambient and 89W at 25°C case temperature. Operating temperature range is -55°C to 150°C (TJ). This component finds application in various power management solutions, including automotive and industrial power systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case9-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C39A (Ta), 264A (Tc)
Rds On (Max) @ Id, Vgs0.85mOhm @ 27A, 10V
FET Feature-
Power Dissipation (Max)2W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id2V @ 934µA
Supplier Device Package9-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4360 pF @ 13 V

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