NTTFS6H880NTAG
T8 80V U8FLManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTTFS6H880NTAG is an N-Channel Power MOSFET designed for demanding applications. This device offers a Drain-to-Source Voltage (Vdss) of 80V and supports continuous drain currents of 6.3A at ambient temperature (Ta) and 21A at case temperature (Tc). With a maximum power dissipation of 3.1W (Ta) and 31W (Tc), it is suitable for high-efficiency power conversion. The NTTFS6H880NTAG features a low on-resistance of 32mOhm at 5A and 10V, with a gate drive voltage range of 6V to 10V. Key parameters include a maximum gate charge (Qg) of 6.9 nC at 10V and input capacitance (Ciss) of 370 pF at 40V. This MOSFET is housed in an 8-WDFN (3.3x3.3) package, supplied on tape and reel, and operates across a temperature range of -55°C to 175°C (TJ). Its robust specifications make it valuable in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 19 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.3A (Ta), 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 31W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 20µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 370 pF @ 40 V |
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