NTTFS6H860NTAG
TRENCH 8 80V NFETManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTTFS6H860NTAG is an N-Channel Trench 8 MOSFET designed for high-efficiency power switching applications. This device features an 80V drain-source voltage (Vdss) and can handle a continuous drain current of 8A (Ta) or 30A (Tc) at 25°C. With a maximum Rds(on) of 21.1mOhm at 5A and 10V Vgs, it offers low conduction losses. The device supports gate drive voltages from 6V to 10V, with a maximum gate-source voltage of ±20V and a threshold voltage (Vgs(th)) of 4V at 30µA. Key capacitance values include an input capacitance (Ciss) of 510pF at 40V. The NTTFS6H860NTAG has a maximum power dissipation of 3.1W (Ta) or 46W (Tc) and operates across a temperature range of -55°C to 175°C. Packaged in an 8-WDFN (3.3x3.3) surface-mount configuration, supplied on tape and reel, this MOSFET is suitable for automotive, industrial, and consumer electronics power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 19 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta), 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 21.1mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 46W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 30µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 40 V |
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