NTTFS6H854NTAG
TRENCH 8 80V NFETManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTTFS6H854NTAG is an N-Channel Power MOSFET designed for demanding applications. This device features an 80V Drain-Source Voltage (Vdss) and offers a continuous drain current of 9.5A at ambient temperature (Ta) and 44A at case temperature (Tc). Its low on-resistance, specified at a maximum of 14.5mOhm at 10A and 10V Vgs, minimizes conduction losses.
With a maximum power dissipation of 3.2W (Ta) and 68W (Tc), the NTTFS6H854NTAG is suitable for power management, motor control, and automotive applications. The device utilizes TrenchFET technology for enhanced performance and is housed in an 8-PowerWDFN (3.3x3.3) surface-mount package, supplied on tape and reel. Key electrical characteristics include a maximum gate charge (Qg) of 13 nC at 10V Vgs and input capacitance (Ciss) of 770 pF at 40V Vds. The operating temperature range is -55°C to 175°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 19 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Ta), 44A (Tc) |
| Rds On (Max) @ Id, Vgs | 14.5mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.2W (Ta), 68W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 45µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 770 pF @ 40 V |
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