NTTFS5C673NLTWG
MOSFET N-CH 60V 13A/50A 8WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTTFS5C673NLTWG is an N-Channel Power MOSFET designed for demanding applications. This component features a 60V drain-to-source voltage (Vdss) and offers a continuous drain current (Id) of 13A at ambient temperature (Ta) and 50A at case temperature (Tc). With a maximum Rds(on) of 9.3mOhm at 25A and 10V, it ensures efficient power transfer. The device supports a drive voltage range from 4.5V to 10V and has a maximum gate charge (Qg) of 9.5nC. Its input capacitance (Ciss) is a maximum of 880pF at 25V. The NTTFS5C673NLTWG is packaged in an 8-PowerWDFN (3.3x3.3) surface-mount configuration, suitable for high-density designs. It operates across a wide temperature range of -55°C to 175°C (TJ). Power dissipation is rated at 3.1W (Ta) and 46W (Tc). This MOSFET is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.3mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 46W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 880 pF @ 25 V |
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