NTTFS5C670NLTWG
MOSFET N-CH 60V 16A/70A 8WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTTFS5C670NLTWG is an N-channel power MOSFET designed for high-performance applications. This component features a 60V drain-to-source voltage (Vdss) and supports continuous drain current of 16A at ambient temperature (Ta) and 70A at case temperature (Tc). With a low on-resistance (Rds On) of 6.5mOhm at 35A and 10V, it minimizes conduction losses. The device offers a maximum power dissipation of 3.2W (Ta) and 63W (Tc), making it suitable for power management in automotive and industrial sectors. It operates from a gate drive voltage range of 4.5V to 10V, with a maximum gate-source voltage (Vgs) of ±20V. Key parameters include a gate charge (Qg) of 20 nC (max) at 10V and input capacitance (Ciss) of 1400 pF (max) at 25V. The NTTFS5C670NLTWG is packaged in an 8-WDFN (3.3x3.3) surface-mount configuration and supplied on tape and reel. Its operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta), 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.2W (Ta), 63W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
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