NTTFS5826NLTAG
MOSFET N-CH 60V 8A 8WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTTFS5826NLTAG is an N-Channel MOSFET designed for demanding applications. This component features a 60V Drain-Source Voltage (Vdss) and supports a continuous drain current of 8A at 25°C ambient. With a low on-resistance of 24mOhm (max) at 7.5A and 10V Vgs, it minimizes conduction losses. The device is housed in an 8-PowerWDFN (3.3x3.3) package, enabling high power density with a maximum power dissipation of 3.1W (Ta) or 19W (Tc). Key parameters include a gate charge of 25 nC (max) and input capacitance of 850 pF (max). Operating within a temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for power management solutions in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 19W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 25 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
2SK4088LS-1E
MOSFET N-CH 650V 7.5A TO220F-3FS
NTMFS4C028NT3G
MOSFET N-CH 30V 16.4A/52A 5DFN
