NTTFS5820NLTWG
MOSFET N-CH 60V 11A/37A 8WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTTFS5820NLTWG is a 60V N-Channel Power MOSFET designed for demanding applications. This device features a low Rds(on) of 11.5mOhm at 8.7A and 10V Vgs, enabling efficient power switching. It offers a continuous drain current of 11A at ambient temperature and 37A at case temperature, with a maximum power dissipation of 2.7W (Ta) and 33W (Tc). The NTTFS5820NLTWG utilizes a 3.3x3.3mm 8-WDFN package for effective thermal management and surface mount integration. Key electrical characteristics include a gate charge of 28nC (max) at 10V Vgs and an input capacitance of 1462pF (max) at 25V Vds. This MOSFET is suitable for use in power management, automotive, and industrial systems. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 37A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.5mOhm @ 8.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.7W (Ta), 33W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1462 pF @ 25 V |
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