NTTFS5820NLTAG
MOSFET N-CH 60V 11A/37A 8WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTTFS5820NLTAG is an N-Channel Power MOSFET designed for efficient power management applications. This component features a 60V drain-source breakdown voltage and offers a continuous drain current capability of 11A at ambient temperature and 37A at case temperature. With a low Rds(on) of 11.5mOhm maximum at 8.7A and 10V, it minimizes conduction losses. The device supports gate drive voltages from 4.5V to 10V. Key parameters include a maximum gate charge of 28 nC and input capacitance of 1462 pF. The NTTFS5820NLTAG is housed in a compact 8-WDFN (3.3x3.3) surface-mount package, enabling high power density with a maximum power dissipation of 2.7W (Ta) and 33W (Tc). Operating across a wide temperature range of -55°C to 150°C, this MOSFET is suitable for use in automotive, industrial, and power supply applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 37A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.5mOhm @ 8.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.7W (Ta), 33W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1462 pF @ 25 V |
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