NTTFS5811NLTWG
MOSFET N-CH 40V 17A/53A 8WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTTFS5811NLTWG is an N-Channel Power MOSFET with a Drain-Source voltage (Vdss) of 40V. It offers a continuous drain current (Id) of 17A at ambient temperature and 53A at case temperature. The device features a low on-resistance (Rds On) of 6.4 mOhm maximum at 20A and 10V Vgs. With a maximum power dissipation of 2.7W (Ta) and 33W (Tc), this MOSFET is suitable for demanding applications. The gate charge (Qg) is 31 nC maximum at 10V Vgs, and input capacitance (Ciss) is 1570 pF maximum at 25V Vds. Designed for surface mounting, it is housed in an 8-PowerWDFN (3.3x3.3) package and supplied on tape and reel. Operating temperature range is -55°C to 150°C. This component finds application in power management and automotive systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta), 53A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.4mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.7W (Ta), 33W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1570 pF @ 25 V |
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