NTTFS5811NLTAG
MOSFET N-CH 40V 17A/53A 8WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTTFS5811NLTAG is an N-Channel Power MOSFET designed for demanding applications. This component features a 40V drain-source breakdown voltage (Vdss) and offers a continuous drain current (Id) of 17A at a 25°C ambient temperature and 53A at a 25°C case temperature. The low on-resistance (Rds On) of 6.4mOhm at 20A and 10V gate-source voltage (Vgs) enables efficient power handling. Maximum power dissipation is rated at 2.7W (Ta) and 33W (Tc). The NTTFS5811NLTAG is packaged in an 8-WDFN (3.3x3.3) surface mount configuration and operates across a temperature range of -55°C to 150°C. Key electrical characteristics include a maximum gate charge (Qg) of 31 nC and input capacitance (Ciss) of 1570 pF. This device is suitable for use in automotive, industrial, and power supply applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta), 53A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.4mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.7W (Ta), 33W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1570 pF @ 25 V |
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