NTTFS4H07NTWG
MOSFET N-CH 25V 18.5A/66A 8WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTTFS4H07NTWG is an N-Channel Power MOSFET designed for high-efficiency applications. This component features a 25V drain-source breakdown voltage and offers continuous drain current capabilities of 18.5A at a typical ambient temperature (Ta) and 66A at a continuous case temperature (Tc). The device exhibits a low on-resistance (Rds(on)) of 4.8mOhm at 30A and 10V Vgs, ensuring minimal power loss. With a maximum junction temperature of 150°C, it dissipates up to 2.64W (Ta) or 33.8W (Tc). The NTTFS4H07NTWG is housed in an 8-WDFN (3.3x3.3) package, suitable for surface mounting and supplied on tape and reel. It supports gate drive voltages from 4.5V to 10V, with a maximum gate-source voltage of ±20V. Key parameters include a gate charge (Qg) of 12.4 nC and input capacitance (Ciss) of 771 pF. This MOSFET is utilized in various industries including automotive and industrial power management.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18.5A (Ta), 66A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.64W (Ta), 33.8W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 771 pF @ 12 V |
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