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NTTFS4H07NTAG

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NTTFS4H07NTAG

MOSFET N-CH 25V 18.5A/66A 8WDFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTTFS4H07NTAG is an N-Channel Power MOSFET designed for demanding applications. This component features a 25 V drain-to-source voltage (Vdss) and offers significant current handling capabilities, with a continuous drain current (Id) of 18.5A at ambient temperature (Ta) and 66A at case temperature (Tc). Its low on-resistance (Rds On) of 4.8 mOhm at 30A and 10V gate-to-source voltage (Vgs) ensures efficient power transfer. The device supports drive voltages from 4.5V to 10V and has a maximum gate charge (Qg) of 12.4 nC at 10V, with input capacitance (Ciss) peaking at 771 pF. Packaged in an 8-PowerWDFN (3.3x3.3) surface mount configuration, it dissipates a maximum of 2.64W (Ta) and 33.8W (Tc). The NTTFS4H07NTAG is suitable for use in automotive and industrial power management systems. It operates across a temperature range of -55°C to 150°C (TJ) with a maximum Vgs of ±20V and a threshold voltage (Vgs(th)) of 2.1V at 250µA.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C18.5A (Ta), 66A (Tc)
Rds On (Max) @ Id, Vgs4.8mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)2.64W (Ta), 33.8W (Tc)
Vgs(th) (Max) @ Id2.1V @ 250µA
Supplier Device Package8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds771 pF @ 12 V

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