NTTFS4H05NTWG
MOSFET N-CH 25V 22.4A/94A 8WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTTFS4H05NTWG is an N-Channel Power MOSFET designed for demanding applications. This device features a 25V drain-source voltage rating and a continuous drain current capability of 22.4A at ambient temperature and 94A at case temperature. With a low Rds(on) of 3.3mOhm at 30A and 10V Vgs, it minimizes conduction losses. The MOSFET is housed in a compact 8-WDFN (3.3x3.3) package, suitable for surface mount assembly. Key parameters include a gate charge of 18.9 nC (max) at 10V Vgs and input capacitance of 1205 pF (max) at 12V Vds. Maximum power dissipation is 2.66W (Ta) or 46.3W (Tc), with an operating junction temperature of 150°C. This component is utilized in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22.4A (Ta), 94A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.66W (Ta), 46.3W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1205 pF @ 12 V |
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