NTTFS4H05NTAG
MOSFET N-CH 25V 22.4A/94A 8WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTTFS4H05NTAG is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a 25V Drain-Source Voltage (Vdss) rating and offers a continuous drain current of 22.4A at 25°C ambient temperature, escalating to 94A under a case temperature of 25°C. The low Rds(on) of 3.3mOhm at 30A and 10V Vgs ensures minimal conduction losses. With a maximum gate charge of 18.9 nC and input capacitance of 1205 pF, it is optimized for fast switching. The device supports gate drive voltages from 4.5V to 10V and has a voltage tolerance of ±20V for Vgs. The NTTFS4H05NTAG is packaged in an 8-PowerWDFN (3.3x3.3) with a maximum power dissipation of 2.66W (ambient) and 46.3W (case), operating up to 150°C junction temperature. This MOSFET is suitable for use in automotive, industrial, and power supply sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22.4A (Ta), 94A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.66W (Ta), 46.3W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1205 pF @ 12 V |
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