NTTFS4C25NTWG
MOSFET N-CH 30V 5A/27A 8WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTTFS4C25NTWG is an N-Channel Power MOSFET designed for efficient power switching applications. This component offers a 30 V drain-to-source voltage (Vdss) and supports a continuous drain current of 5 A at ambient temperature and 27 A at case temperature. With a maximum on-resistance (Rds On) of 17 mOhm at 10 A and 10 V Vgs, it ensures low conduction losses. The device features a low gate charge (Qg) of 10.3 nC at 10 V, facilitating fast switching speeds. Maximum power dissipation is rated at 690 mW at ambient temperature and 20.2 W at case temperature. The NTTFS4C25NTWG utilizes an 8-WDFN (3.3x3.3) package for surface mounting and is supplied on tape and reel. This MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta), 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 690mW (Ta), 20.2W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 15 V |
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