NTTFS4C25NTAG
MOSFET N-CH 30V 5A/27A 8WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTTFS4C25NTAG is an N-Channel Power MOSFET designed for efficient switching applications. This component features a 30V drain-source voltage (Vdss) and offers a continuous drain current capability of 5A at ambient temperature (Ta) and 27A at case temperature (Tc). The Rds(On) is specified at a maximum of 17mOhm at 10A and 10V, with drive voltages ranging from 4.5V to 10V. The device boasts a low gate charge of 10.3 nC at 10V and an input capacitance of 500 pF at 15V. Power dissipation is rated at 690mW (Ta) and 20.2W (Tc). Packaged in an 8-WDFN (3.3x3.3) surface mount configuration, this MOSFET operates within a temperature range of -55°C to 150°C. It is supplied on tape and reel. The onsemi NTTFS4C25NTAG finds application in various power management solutions across automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta), 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 690mW (Ta), 20.2W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 15 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
