NTTFS4C13NTWG
MOSFET N-CH 30V 7.2A 8WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTTFS4C13NTWG is an N-Channel Power MOSFET designed for demanding applications. This device features a 30V Drain-Source Voltage (Vdss) and supports a continuous drain current of 7.2A at 25°C ambient. Its low on-resistance of 9.4mOhm at 30A and 10V gate drive voltage (Vgs) is achieved with a 4.5V Vgs minimum drive. The NTTFS4C13NTWG boasts a maximum gate charge of 7.8 nC at 4.5V and an input capacitance of 770 pF at 15V. Manufactured using MOSFET technology, it is housed in an 8-WDFN (3.3x3.3) package for surface mounting, supplied on tape and reel. Power dissipation is rated at 780mW ambient and 21.5W case. This component is suitable for use in automotive and industrial power management systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 9.4mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 780mW (Ta), 21.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 770 pF @ 15 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
2SK4088LS-1E
MOSFET N-CH 650V 7.5A TO220F-3FS
NTMFS4C028NT3G
MOSFET N-CH 30V 16.4A/52A 5DFN
