NTTFS4C10NTWG
MOSFET N-CH 30V 8.2A/44A 8WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTTFS4C10NTWG is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a 30 V drain-source voltage (Vdss) and supports continuous drain currents of 8.2 A at ambient temperature (Ta) and 44 A at case temperature (Tc). Its low on-resistance (Rds On) of 7.4 mOhm at 30 A and 10 V gate-source voltage (Vgs) minimizes conduction losses. The NTTFS4C10NTWG offers a maximum power dissipation of 790 mW at Ta and 23.6 W at Tc, making it suitable for demanding thermal environments. Packaged in an 8-WDFN (3.3x3.3) with tape and reel packaging, it is ideal for surface mounting. Key parameters include a gate charge (Qg) of 18.6 nC at 10 V and input capacitance (Ciss) of 993 pF at 15 V. This component finds application in power management solutions across automotive and industrial sectors. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.2A (Ta), 44A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.4mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 790mW (Ta), 23.6W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 993 pF @ 15 V |
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