NTTFS4C08NTWG
MOSFET N-CH 30V 9.3A 8WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTTFS4C08NTWG is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 9.3A at 25°C ambient. With a maximum Rds(on) of 5.9mOhm at 30A and 10V Vgs, it offers excellent conduction characteristics. The device is housed in a compact 8-WDFN (3.3x3.3) package, providing superior thermal performance with a power dissipation of 25.5W at 100°C case temperature. Key parameters include a gate charge of 18.2 nC at 10V and input capacitance of 1113 pF at 15V. Operating across a temperature range of -55°C to 150°C, it is suitable for demanding applications in automotive, industrial power supplies, and consumer electronics where robust power management is critical. The NTTFS4C08NTWG utilizes advanced MOSFET technology for optimal performance and reliability.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.9mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 820mW (Ta), 25.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1113 pF @ 15 V |
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