NTTFS4C06NTWG
MOSFET N-CH 30V 11A/67A 8WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTTFS4C06NTWG is a 30V N-Channel MOSFET designed for high-efficiency power conversion. This device features a low on-resistance of 4.2mOhm at 30A, 10V, contributing to reduced conduction losses. With a continuous drain current capability of 11A at ambient temperature and 67A at case temperature, it is suitable for demanding applications. The NTTFS4C06NTWG is housed in a compact 8-WDFN (3.3x3.3) package, facilitating dense board layouts. Its low thermal resistance and high power dissipation of 31W (Tc) ensure reliable operation in challenging thermal environments. Key electrical characteristics include a gate charge of 36 nC and input capacitance of 3366 pF at 15V. This MOSFET is commonly utilized in automotive and industrial power management systems. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 67A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 810mW (Ta), 31W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3366 pF @ 15 V |
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