NTTFS4C05NTWG
MOSFET N-CH 30V 12A/75A 8WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTTFS4C05NTWG is a 30V N-Channel Power MOSFET designed for demanding applications. This component offers a continuous drain current of 12A at ambient temperature and 75A at case temperature, with a maximum power dissipation of 820mW (Ta) and 33W (Tc). It features a low on-resistance of 3.6mOhm at 30A and 10V. The device is housed in an 8-WDFN (3.3x3.3) surface mount package, suitable for high-density board designs. Key electrical parameters include a gate charge of 31nC at 10V and input capacitance of 1988pF at 15V. Operating across a temperature range of -55°C to 150°C, this MOSFET is utilized in power management and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 820mW (Ta), 33W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1988 pF @ 15 V |
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