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NTTFS4985NFTAG

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NTTFS4985NFTAG

MOSFET N-CH 30V 16.3A/64A 8WDFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTTFS4985NFTAG is an N-Channel Power MOSFET featuring a 30V Vds rating. This device offers a continuous drain current of 16.3A at a typical ambient temperature (Ta) and 64A at a case temperature (Tc). Its low on-resistance is specified at a maximum of 3.5mOhm at 20A and 10Vgs. Optimized for thermal performance, it provides a maximum power dissipation of 1.47W (Ta) and 22.73W (Tc). The NTTFS4985NFTAG utilizes a 3.3x3.3mm 8-PowerWDFN package suitable for surface mounting and is supplied on tape and reel. Key electrical parameters include a maximum gate charge (Qg) of 29.4 nC at 10Vgs and input capacitance (Ciss) of 2075 pF at 15Vds. This component is widely utilized in power management applications across automotive and industrial sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C16.3A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs3.5mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)1.47W (Ta), 22.73W (Tc)
Vgs(th) (Max) @ Id2.3V @ 250µA
Supplier Device Package8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs29.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2075 pF @ 15 V

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