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NTTFS4945NTWG

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NTTFS4945NTWG

MOSFET N-CH 30V 7.1A/34A 8WDFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTTFS4945NTWG is an N-Channel Power MOSFET designed for high-efficiency power management applications. Featuring a 30V drain-source breakdown voltage and a continuous drain current rating of 7.1A at 25°C ambient or 34A at 25°C case temperature, this component is suitable for demanding power conversion and switching tasks. Its low on-resistance of 9mOhm at 20A and 10V gate-source voltage, coupled with a maximum gate charge of 17.3 nC at 10V, ensures efficient operation. The device offers a maximum power dissipation of 890mW at 25°C ambient and 20W at 25°C case temperature. Packaged in an 8-WDFN (3.3x3.3) surface mount configuration, the NTTFS4945NTWG is available on tape and reel. This MOSFET is utilized in industries such as automotive, industrial automation, and consumer electronics, where reliable power switching is critical.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C7.1A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs9mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)890mW (Ta), 20W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs17.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1194 pF @ 15 V

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