NTTFS4943NTWG
MOSFET N-CH 30V 8A/41A 8WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTTFS4943NTWG is an N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-to-source voltage (Vdss) and offers a continuous drain current of 8A at 25°C ambient and 41A continuous drain current at 25°C case temperature. With a low on-resistance of 7.2mOhm maximum at 20A and 10V Vgs, it minimizes conduction losses. The device is housed in a compact 8-WDFN (3.3x3.3) package, suitable for surface mounting. Key electrical characteristics include a maximum gate charge of 20.4 nC and an input capacitance of 1386 pF at 15V Vds. Power dissipation reaches 840mW at 25°C ambient and 22.3W at 25°C case. The NTTFS4943NTWG operates across a temperature range of -55°C to 150°C. This MOSFET is utilized in power management solutions, automotive applications, and industrial power conversion systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta), 41A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.2mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 840mW (Ta), 22.3W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 20.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1386 pF @ 15 V |
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