NTTFS4943NTAG
MOSFET N-CH 30V 8A/41A 8WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTTFS4943NTAG is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 30V and offers a continuous drain current (Id) of 8A at ambient temperature (Ta) and 41A at case temperature (Tc). With a low on-resistance of 7.2mOhm at 20A and 10V, the NTTFS4943NTAG minimizes conduction losses. Its maximum gate charge (Qg) is 20.4 nC at 10V, and it exhibits an input capacitance (Ciss) of 1386 pF maximum at 15V. The device supports gate drive voltages from 4.5V to 10V and has a maximum gate-source voltage (Vgs) of ±20V. Dissipation ratings include 840mW at Ta and 22.3W at Tc. Packaged in an 8-WDFN (3.3x3.3) for surface mounting, this MOSFET is suitable for use in automotive and industrial power management systems. Operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta), 41A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.2mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 840mW (Ta), 22.3W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 20.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1386 pF @ 15 V |
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