NTTFS4941NTAG
MOSFET N-CH 30V 8.3A/46A 8WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTTFS4941NTAG is an N-Channel Power MOSFET designed for demanding applications. This component features a 30 V drain-to-source voltage (Vdss) and offers a continuous drain current (Id) of 8.3 A at 25°C ambient temperature and 46 A at 25°C case temperature. The NTTFS4941NTAG exhibits a maximum on-resistance (Rds On) of 6.2 mOhm at 20 A and 10 V gate-source voltage. With a maximum power dissipation of 840 mW (Ta) and 25.5 W (Tc), it is suitable for power management in industrial automation, automotive, and consumer electronics. The device operates within a temperature range of -55°C to 150°C (TJ) and is housed in a compact 8-WDFN (3.3x3.3) surface mount package, supplied on tape and reel. Key electrical parameters include a gate charge (Qg) of 22.8 nC (max) at 10 V and input capacitance (Ciss) of 1619 pF (max) at 15 V. The drive voltage range for optimal Rds On is 4.5 V to 10 V, with a maximum gate-source voltage (Vgs) of ±20 V.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.3A (Ta), 46A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.2mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 840mW (Ta), 25.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 22.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1619 pF @ 15 V |
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