NTTFS4939NTWG
MOSFET N-CH 30V 8.9A/52A 8WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTTFS4939NTWG is a 30V N-Channel MOSFET designed for efficient power switching. This device features a low on-resistance of 5.5mOhm at 20A and 10V Vgs, with a continuous drain current capability of 8.9A at 25°C ambient and 52A at 25°C case temperature. The maximum power dissipation is 850mW (Ta) or 29.8W (Tc). It offers a gate charge of 28 nC at 10V and input capacitance of 1979 pF at 15V. The NTTFS4939NTWG is housed in an 8-PowerWDFN (3.3x3.3) surface mount package, suitable for operation between -55°C and 150°C. Its specifications make it applicable in various power management solutions, including automotive and industrial applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.9A (Ta), 52A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 850mW (Ta), 29.8W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1979 pF @ 15 V |
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