NTTFS4939NTAG
MOSFET N-CH 30V 8.9A/52A 8WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTTFS4939NTAG is an N-Channel Power MOSFET designed for high-efficiency power management applications. This device features a 30V drain-source breakdown voltage and offers a continuous drain current capability of 8.9A at ambient temperature and 52A at case temperature. With a low on-resistance of 5.5mOhm maximum at 20A and 10V gate drive, it minimizes conduction losses. The MOSFET is housed in a compact 8-WDFN (3.3x3.3) package, suitable for surface mounting. Key electrical parameters include a maximum gate charge of 28nC at 10V and input capacitance of 1979pF at 15V. Power dissipation is rated at 850mW ambient and 29.8W at case temperature. This component is widely utilized in automotive, industrial, and consumer electronics sectors for power switching and conversion.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.9A (Ta), 52A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 850mW (Ta), 29.8W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1979 pF @ 15 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
RFD14N05LSM
MOSFET N-CH 50V 14A TO252AA
