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NTTFS4937NTWG

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NTTFS4937NTWG

MOSFET N-CH 30V 11A/75A 8WDFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTTFS4937NTWG is an N-Channel Power MOSFET designed for demanding applications. This device offers a Drain-to-Source Voltage (Vdss) of 30V and features a low Rds(on) of 4.5mOhm at 20A and 10V Vgs. It supports continuous drain currents of 11A at ambient temperature and 75A at case temperature, with a maximum power dissipation of 860mW (Ta) and 43.1W (Tc). Key electrical characteristics include a gate charge (Qg) of 35.5 nC (max) at 10V Vgs and input capacitance (Ciss) of 2540 pF (max) at 15V Vds. The NTTFS4937NTWG operates across a temperature range of -55°C to 150°C (TJ) and is supplied in a compact 8-PowerWDFN (3.3x3.3) surface mount package, typically supplied on tape and reel. This component is frequently utilized in automotive and industrial power management systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs4.5mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)860mW (Ta), 43.1W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs35.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2540 pF @ 15 V

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