NTTFS4932NTWG
MOSFET N-CH 30V 11A/79A 8WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTTFS4932NTWG is an N-Channel Power MOSFET designed for high-efficiency applications. This device features a 30V drain-source breakdown voltage (Vdss) and a low on-resistance (Rds(on)) of 4mOhm at 20A and 10V Vgs. It offers a continuous drain current (Id) of 11A at 25°C ambient and up to 79A at 25°C case temperature. With a maximum power dissipation of 850mW (Ta) and 43W (Tc), it is suitable for demanding thermal environments. The NTTFS4932NTWG supports gate drive voltages from 4.5V to 10V and has a maximum gate charge (Qg) of 46.5nC. Input capacitance (Ciss) is rated at 3111pF at 15V Vds. This MOSFET is supplied in an 8-PowerWDFN (3.3x3.3) surface mount package, on tape and reel. It finds application in power management, automotive, and industrial systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 79A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 850mW (Ta), 43W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 46.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3111 pF @ 15 V |
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