NTTFS4930NTWG
MOSFET N-CH 30V 4.5A/23A 8WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTTFS4930NTWG is a N-Channel Power MOSFET designed for high-efficiency power switching applications. This component offers a drain-source voltage (Vdss) of 30V and continuous drain current (Id) capabilities of 4.5A at ambient temperature and 23A at case temperature. Its low on-resistance (Rds On) of 23mOhm at 6A and 10V gate drive makes it suitable for power management solutions. Featuring a 3.3x3.3mm 8-WDFN package, the NTTFS4930NTWG supports surface mount assembly and operates across a wide temperature range of -55°C to 150°C. Key electrical characteristics include a maximum gate charge (Qg) of 5.5 nC at 4.5V and input capacitance (Ciss) of 476 pF at 15V. The device is rated for a maximum power dissipation of 790mW (Ta) and 20.2W (Tc). This MOSFET is commonly employed in automotive and industrial power control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta), 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 790mW (Ta), 20.2W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 476 pF @ 15 V |
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