NTTFS4929NTAG
MOSFET N-CH 30V 6.6A/34A 8WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTTFS4929NTAG is an N-Channel Power MOSFET designed for high-efficiency power management applications. This device features a 30V drain-source voltage (Vdss) and offers a continuous drain current (Id) of 6.6A at ambient temperature (Ta) and 34A at case temperature (Tc). The low on-resistance (Rds On) of 11mOhm at 10A and 10V gate drive, combined with a maximum gate-source voltage (Vgs) of ±20V, ensures efficient switching performance. With a maximum power dissipation of 810mW (Ta) and 22.3W (Tc), this MOSFET is suitable for demanding thermal environments. Key parameters include a gate charge (Qg) of 8.8 nC at 4.5V and an input capacitance (Ciss) of 920 pF at 15V. The NTTFS4929NTAG is packaged in a compact 8-PowerWDFN (3.3x3.3) for surface mounting and is supplied on tape and reel. This component is commonly utilized in industrial and automotive power supply designs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.6A (Ta), 34A(Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 810mW (Ta), 22.3W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 920 pF @ 15 V |
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