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NTTFS4928NTWG

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NTTFS4928NTWG

MOSFET N-CH 30V 7.3A/37A 8WDFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTTFS4928NTWG is an N-Channel Power MOSFET designed for applications requiring efficient power switching. This component features a 30V drain-source voltage (Vdss) and offers a continuous drain current (Id) of 7.3A at 25°C ambient temperature and 37A at 25°C case temperature. With a low on-resistance (Rds On) of 9mOhm at 20A and 10V gate-source voltage (Vgs), it minimizes conduction losses. The device supports gate drive voltages from 4.5V to 10V, with a maximum gate charge (Qg) of 8 nC at 4.5V Vgs. Input capacitance (Ciss) is a maximum of 913 pF at 15V Vds. The NTTFS4928NTWG is housed in a compact 8-PowerWDFN (3.3x3.3) package, enabling high power density with maximum power dissipation of 810mW (Ta) and 20.8W (Tc). Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is suitable for use in automotive and industrial power management systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C7.3A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs9mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)810mW (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds913 pF @ 15 V

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