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NTTFS4928NTAG

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NTTFS4928NTAG

MOSFET N-CH 30V 7.3A/37A 8WDFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTTFS4928NTAG is an N-Channel Power MOSFET designed for demanding applications. This component features a 30V Drain-to-Source voltage (Vdss) and offers a continuous drain current of 7.3A at ambient temperature (Ta) and 37A at case temperature (Tc). The device boasts a low on-resistance of 9mOhm at 20A and 10V. With a maximum power dissipation of 810mW (Ta) and 20.8W (Tc), it is suited for high-efficiency power management. Key electrical parameters include a gate charge (Qg) of 16 nC at 10V and input capacitance (Ciss) of 913 pF at 15V. The NTTFS4928NTAG utilizes a 3.3x3.3mm 8-PowerWDFN (3.3x3.3) surface mount package, supplied on tape and reel. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is commonly found in automotive and industrial power conversion systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C7.3A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs9mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)810mW (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds913 pF @ 15 V

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