NTTFS4824NTAG
MOSFET N-CH 30V 8.3A/69A 8WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTTFS4824NTAG is an N-Channel Power MOSFET designed for high-efficiency applications. This device features a 30 V drain-source voltage (Vdss) and offers a continuous drain current (Id) of 8.3 A at a temperature of 25°C (Ta) and 69 A at the case temperature (Tc). The low on-resistance (Rds On) of 5 mOhm at 20 A and 10 V gate-source voltage (Vgs) minimizes conduction losses. With a maximum power dissipation of 660 mW (Ta) and 46.3 W (Tc), the NTTFS4824NTAG is suitable for demanding thermal environments. Key electrical parameters include a gate charge (Qg) of 29 nC at 11.5 V and input capacitance (Ciss) of 2363 pF at 12 V. The device operates across a temperature range of -55°C to 150°C. Supplied in an 8-PowerWDFN (3.3x3.3) surface mount package and available on tape and reel, this MOSFET is utilized in power management, automotive, and industrial sectors requiring robust switching performance.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.3A (Ta), 69A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 660mW (Ta), 46.3W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 11.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2363 pF @ 12 V |
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