NTTFS4823NTWG
MOSFET N-CH 30V 7.1A/50A 8WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTTFS4823NTWG is an N-Channel Power MOSFET designed for efficient switching applications. This component features a 30V drain-source breakdown voltage (Vdss) and offers a continuous drain current of 7.1A at ambient temperature (Ta) and 50A at case temperature (Tc). With a low Rds(On) of 10.5mOhm at 20A and 10V, it minimizes conduction losses. The device is packaged in an 8-WDFN (3.3x3.3) surface mount configuration, suitable for compact designs. Key electrical characteristics include a Vgs(th) of 2.5V, a gate charge (Qg) of 9 nC at 4.5V, and input capacitance (Ciss) of 1013 pF at 12V. Maximum power dissipation is 660mW (Ta) and 32.9W (Tc). Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is commonly utilized in power management, automotive, and industrial applications where high efficiency and robust performance are critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.1A (Ta), 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 660mW (Ta), 32.9W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1013 pF @ 12 V |
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