NTTFS4821NTWG
MOSFET N-CH 30V 7.5A/57A 8WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTTFS4821NTWG is a 30V N-Channel Power MOSFET designed for high-efficiency power management. This device features a low on-resistance of 7mOhm at 20A and 10V, facilitating minimal conduction losses. It offers continuous drain current capabilities of 7.5A at ambient temperature and 57A at case temperature, with a maximum power dissipation of 660mW (Ta) and 38.5W (Tc). The NTTFS4821NTWG is supplied in a compact 8-WDFN (3.3x3.3) package, suitable for space-constrained applications. Key electrical parameters include a gate charge (Qg) of 24 nC at 11.5V and input capacitance (Ciss) of 1755 pF at 12V. This MOSFET is engineered for demanding applications across automotive, industrial, and consumer electronics sectors where robust power switching is essential. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Ta), 57A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 660mW (Ta), 38.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 11.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1755 pF @ 12 V |
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