NTTFS4821NTAG
MOSFET N-CH 30V 7.5A/57A 8WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi NTTFS4821NTAG is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a drain-to-source voltage (Vdss) of 30V and supports a continuous drain current (Id) of 7.5A at ambient temperature and 57A at case temperature. The low on-resistance (Rds On) of 7mOhm at 20A and 10V gate drive makes it suitable for efficient power switching. With a maximum gate charge (Qg) of 24 nC at 11.5V, it facilitates fast switching speeds. The device is housed in an 8-WDFN (3.3x3.3) surface-mount package, offering a power dissipation of 660mW (Ta) or 38.5W (Tc). Operating across a wide temperature range of -55°C to 150°C, the NTTFS4821NTAG finds application in automotive, industrial power supplies, and high-efficiency DC-DC converters.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Ta), 57A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 660mW (Ta), 38.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 11.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1755 pF @ 12 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
RFD14N05LSM
MOSFET N-CH 50V 14A TO252AA
