NTTFS3A08PZTAG
MOSFET P-CH 20V 9A 8WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTTFS3A08PZTAG is a P-Channel MOSFET designed for high-efficiency power switching applications. This device features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 9A at 25°C. With a maximum on-resistance (Rds On) of 6.7mOhm at 12A and 4.5V, it offers low conduction losses. The device is packaged in an 8-WDFN (3.3x3.3) surface mount package, providing excellent thermal performance with a power dissipation of 840mW (Ta). Key parameters include a gate charge (Qg) of 56nC at 4.5V and input capacitance (Ciss) of 5000pF at 10V. This MOSFET is suitable for use in automotive and industrial power management systems. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.7mOhm @ 12A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 840mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5000 pF @ 10 V |
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