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NTTD4401FR2G

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NTTD4401FR2G

MOSFET P-CH 20V 2.4A MICRO8

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTTD4401FR2G is a P-Channel MOSFET from the FETKY™ series. This device features a Drain-to-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 2.4A at 25°C. The Rds On is specified at a maximum of 90mOhm at 3.3A and 4.5V Vgs, with a gate drive voltage range of 2.5V to 4.5V. Key characteristics include a maximum power dissipation of 780mW (Ta) and an isolated Schottky diode integrated within the package. The device operates across a temperature range of -55°C to 150°C. It is supplied in an 8-MSOP package, suitable for surface mounting, and available on tape and reel. This MOSFET is utilized in applications such as power management and load switching.

Additional Information

Series: FETKY™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-TSSOP, 8-MSOP (0.118"", 3.00mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C2.4A (Ta)
Rds On (Max) @ Id, Vgs90mOhm @ 3.3A, 4.5V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)780mW (Ta)
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device Package8-MSOP
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds750 pF @ 16 V

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