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NTS4172NT1G

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NTS4172NT1G

MOSFET N-CH 30V 1.6A SC70-3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTS4172NT1G is an N-Channel MOSFET designed for various applications, including automotive and industrial control. This component features a drain-source breakdown voltage of 30 V and a continuous drain current capability of 1.6 A at 25°C. With a maximum on-resistance of 93 mOhm at 1.7 A and 10 V gate-source voltage, it offers efficient switching performance. The device operates with a gate-source threshold voltage of 1.4 V at 250 µA and has a gate charge of 4.38 nC at 4.5 V. Input capacitance (Ciss) is specified at a maximum of 381 pF at 15 V. The NTS4172NT1G is housed in an SC-70-3 (SOT323) surface mount package and is supplied on tape and reel. It is rated for operation across a temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C1.6A (Ta)
Rds On (Max) @ Id, Vgs93mOhm @ 1.7A, 10V
FET Feature-
Power Dissipation (Max)294mW (Ta)
Vgs(th) (Max) @ Id1.4V @ 250µA
Supplier Device PackageSC-70-3 (SOT323)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs4.38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds381 pF @ 15 V

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