NTS4101PT1
MOSFET P-CH 20V 1.37A SC70-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTS4101PT1 is a P-Channel enhancement mode Power MOSFET designed for space-constrained applications. This device features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) rating of 1.37A at 25°C ambient temperature, with a maximum power dissipation of 329mW. The on-resistance (Rds On) is specified at 120 mOhm maximum at 1A and 4.5V Vgs. Key parameters include a gate charge of 9 nC maximum at 4.5V Vgs and input capacitance of 840 pF maximum at 20V Vds. The NTS4101PT1 utilizes a surface mount SC-70-3 (SOT323) package and operates within a temperature range of -55°C to 150°C. This component is suitable for use in portable electronics and various power management circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.37A (Ta) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 329mW (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 100µA |
| Supplier Device Package | SC-70-3 (SOT323) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 840 pF @ 20 V |
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